Hole and Electron Doping of Topochemically Reduced Ni(I)/Ru(II) Insulating Ferromagnetic Oxides

Self-limited kinetics of electron doping in correlated oxides

Emergent spin filter at the interface between ferromagnetic and insulating layered oxides.

We report a strong effect of interface-induced magnetization on the transport properties of magnetic tunnel junctions consisting of ferromagnetic manganite La0.7Ca0.3MnO3 and insulating cuprate PrBa2Cu3O7. Contrary to the typically observed steady increase of the tunnel magnetoresistance with decreasing temperature, this system exhibits a sudden anomalous decrease at low temperatures. Interesti...

Chemical doping and electron-hole conduction asymmetry in graphene devices.

We investigate poly(ethylene imine) and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin...

Correlated electron-hole mechanism for molecular doping in organic semiconductors

Jing Li,1 Gabriele D’Avino,1,2,* Anton Pershin,2 Denis Jacquemin,3,4 Ivan Duchemin,5 David Beljonne,2 and Xavier Blase1,† 1Grenoble Alpes University, CNRS, Inst. NÉEL, F-38042 Grenoble, France 2Laboratory for the Chemistry of Novel Materials, University of Mons, Place du Parc 20, BE-7000 Mons, Hainaut, Belgium 3Laboratoire CEISAM UMR CNR 6230, Université de Nantes, 2 Rue de la Houssinière, BP 9...

Perovskite-based heterostructures integrating ferromagnetic-insulating La0.1Bi0.9MnO3

M. Gajek Instituto de Ciencia de Materiales de Barcelona-Consejo Superior de Investigaciones Cientificas (ICMAB-CSIC), Campus de la Universitat Autonoma de Barcelona (UAB), Bellaterra 08193, Catalunya, Spain and Unité Mixte de Physique Centre National de la Recherche Scientifique-THALES (CNRS-THALES), Universite Paris-Sud, Domaine de Corbeville, Orsay, 91404 France M. Bibes Institut d’Electroni...